2N5302
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N5302 is an NPN bipolar junction transistor (BJT) designed for robust power applications. This through-hole component, housed in a TO-204AD (TO-3) package, offers a collector-emitter breakdown voltage of 60V and can handle a continuous collector current (Ic) up to 30A. With a maximum power dissipation of 5W and a guaranteed minimum DC current gain (hFE) of 15 at 15A and 2V, the 2N5302 is suitable for power switching and amplification circuits. The transistor exhibits a Vce(sat) of 3V at 6A collector current and 30A collector current, and a collector cutoff current (Icbo) of 10µA. It operates across a wide temperature range from -65°C to 200°C (TJ). This device finds application in industrial power control, power supplies, and motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 6A, 30A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 15A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 5 W |