2N5290
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5290 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 100 V and a maximum continuous collector current of 10 A, supporting a substantial power dissipation of 116 W. Its stud mount configuration, compatible with TO-61, TO-211MA, and TO-210AC packages, facilitates robust thermal management. The 2N5290 is well-suited for power switching, amplification, and regulation circuits across various industrial sectors, including power supplies, motor control, and audio amplification systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 116 W |
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