2N5289
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5289 is a high-power PNP bipolar junction transistor (BJT) designed for robust power switching and amplification applications. This stud-mount device, housed in a TO-61 package, offers a maximum collector current of 10 A and a power dissipation capability of 116 W, making it suitable for demanding industrial, automotive, and high-fidelity audio amplifier circuits. With a collector-emitter breakdown voltage of 100 V, the 2N5289 provides ample voltage headroom for various power management tasks. Its construction facilitates efficient heat dissipation, crucial for reliable operation in elevated temperature environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 116 W |
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