2N5288
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5288 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. Featuring a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 10 A, this device is rated for a maximum power dissipation of 116 W. The 2N5288 is housed in a robust TO-61 stud mount package, ensuring effective thermal management for reliable operation across a wide temperature range of -65°C to 200°C. Its Vce(sat) is specified at 900mV at 500µA base current and 5mA collector current. This component is suitable for power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 116 W |
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