2N5150
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5150 is a PNP bipolar junction transistor (BJT) designed for power applications. This through-hole component, housed in a TO-205AA (TO-5-3 Metal Can) package, features a maximum collector current (Ic) of 2 A and a maximum collector-emitter breakdown voltage (Vce) of 80 V. It is rated for a maximum power dissipation of 7 W. The 2N5150 is commonly utilized in power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 7 W |
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