2N5069
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5069 is an NPN bipolar junction transistor (BJT) designed for power applications. This through-hole device features a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 5 A. With a maximum power dissipation of 87 W, it is suitable for demanding switching and amplification tasks. The transistor is housed in a TO-204AD (TO-3) package, a robust form factor commonly employed in industrial and automotive environments. Its wide operating temperature range of -65°C to 200°C ensures reliable performance across various conditions. The 2N5069 is utilized in power control circuits, voltage regulation, and general-purpose amplification within industrial automation, power supplies, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 87 W |