2N5049
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N5049 is an NPN bipolar junction transistor (BJT) designed for power applications. This stud-mount device, housed in a TO-61 package, offers a collector current capability of up to 10 A and a maximum power dissipation of 100 W. The 2N5049 features a collector-emitter breakdown voltage of 50 V and operates across a wide temperature range of -65°C to 200°C. Its robust construction and power handling characteristics make it suitable for use in industrial power supplies, motor control circuits, and audio amplification systems. The device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 W |
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