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2N5011U4

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2N5011U4

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Bipolar (BJT) Transistor NPN 600 V 200 mA 1 W Surface Mount U4

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 5mA, 25mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 25mA, 10V
Frequency - Transition-
Supplier Device PackageU4
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)600 V
Power - Max1 W

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