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2N5010S

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2N5010S

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Bipolar (BJT) Transistor NPN 500 V 200 mA 1 W Through Hole TO-39 (TO-205AD)

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.4V @ 5mA, 25mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 25mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
Current - Collector (Ic) (Max)200 mA
Voltage - Collector Emitter Breakdown (Max)500 V
Power - Max1 W

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