2N5008
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5008 is a PNP bipolar junction transistor designed for high-power applications. This component features a 600mV Vce saturation rating at 500µA base current and 5mA collector current, with a maximum collector-emitter breakdown voltage of 80V. It is rated for a continuous collector current of 10A and a maximum power dissipation of 100W. The 2N5008 is packaged in a TO-61 stud mount configuration, suitable for demanding thermal environments. This device finds application in power switching and amplification circuits across various industrial sectors, including automotive and general industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 100 W |
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