2N5007
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5007 is a PNP Power Bipolar Junction Transistor (BJT) designed for high-power applications. This device features a maximum collector current (Ic) of 10 A and a collector-emitter breakdown voltage (Vce) of 80 V. With a maximum power dissipation of 100 W, the 2N5007 is suitable for demanding tasks. The transistor is housed in a stud mount TO-61 package, facilitating efficient heat dissipation. Its operating temperature range spans from -65°C to 200°C, ensuring reliability in diverse environmental conditions. This component finds application in power switching circuits and general-purpose amplification within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 100 W |
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