2N5006
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N5006 is a PNP bipolar junction transistor (BJT) designed for high-power applications. This device features a collector-emitter breakdown voltage of 80 V and a maximum continuous collector current of 10 A. With a power dissipation capability of 100 W, it is suitable for demanding switching and amplification tasks. The 2N5006 is offered in a stud-mount TO-61 package, facilitating robust thermal management. Its operating temperature range extends from -65°C to 200°C, ensuring reliable performance across various environmental conditions. This transistor finds utility in power supply regulation, audio amplification, and general-purpose high-current switching circuits across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 100 W |
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