2N4999
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N4999 is a PNP bipolar junction transistor (BJT) designed for power applications. This component features a 80 V collector-emitter breakdown voltage and a maximum collector current of 2 A. Dissipating up to 35 W, the 2N4999 is housed in a TO-59 stud mount package, facilitating robust thermal management. Its robust construction and electrical characteristics make it suitable for use in industrial automation, power control systems, and automotive applications where reliable power switching is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-210AA, TO-59-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-59 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 35 W |
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