2N4998
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N4998 is an NPN bipolar junction transistor designed for high-power applications. This component features an 80 V collector-emitter breakdown voltage and a maximum collector current of 2 A, with a power dissipation capability of 35 W. It is presented in a stud mount package, specifically TO-59, facilitating robust thermal management. The 2N4998 is suitable for use in power switching and amplification circuits across various industrial sectors, including telecommunications, industrial automation, and power supplies. Its operational temperature range spans from -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-210AA, TO-59-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 850mV @ 200µA, 1mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-59 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 35 W |
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