2N4907
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N4907 is a high-power PNP bipolar junction transistor (BJT) housed in a TO-204AD (TO-3) package. This through-hole component offers a maximum collector current (Ic) of 10 A and a maximum collector-emitter breakdown voltage (Vce) of 40 V, with a substantial power dissipation capability of 150 W. The operating junction temperature range for the 2N4907 is -65°C to 200°C. This device is suitable for applications requiring robust power handling in industrial control, audio amplification, and power supply circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 150 W |
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