2N4387
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N4387 is a PNP bipolar junction transistor (BJT) designed for power applications. This component features a collector-emitter breakdown voltage of 40 V and a maximum collector current of 2 A. With a power dissipation capability of 20 W, the 2N4387 is suitable for use in the industrial and telecommunications sectors. The transistor is housed in a TO-66 (TO-213AA) package, facilitating through-hole mounting. Its operating temperature range extends from -65°C to 200°C (TJ), ensuring reliable performance in demanding environments.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 20 W |
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