2N4309
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N4309 is an NPN bipolar junction transistor (BJT) designed for power applications. This through-hole component, packaged in a TO-205AA (TO-5-3 Metal Can), offers a collector current (Ic) capability of up to 5 A and a collector-emitter breakdown voltage (Vce) of 80 V. With a maximum power dissipation of 1.5 W, the 2N4309 is suitable for use in various industrial and commercial electronic systems requiring robust power switching and amplification. Its TO-5AA package facilitates straightforward board mounting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.5 W |
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