2N4301
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N4301 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This stud-mount device, packaged in a TO-61 and equivalent TO-211MA, TO-210AC formats, offers a robust 80V collector-emitter breakdown voltage and a significant 10A continuous collector current capability. Its 87W power dissipation rating makes it suitable for power switching and amplification circuits where thermal management is critical. The 2N4301 finds application in industrial power control, automotive electronics, and general-purpose power amplification stages.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MA, TO-210AC, TO-61-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-61 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 87 W |
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