2N4237
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N4237 is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, packaged in a TO-39 metal can (TO-205AD), offers a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 1A. With a power dissipation capability of 1W and a minimum DC current gain (hFE) of 30 at 500mA and 1V, it provides reliable performance in demanding environments. The saturation voltage (Vce Sat) is specified at 600mV maximum for 100mA base current and 1A collector current. The transistor operates within an extended temperature range of -65°C to 200°C. This component is frequently utilized in industrial control, power supply regulation, and audio amplification circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 500mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
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