2N4236L
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N4236L is a power bipolar junction transistor (BJT) designed for demanding applications. This PNP transistor features a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 1 A, with a maximum power dissipation of 1 W. With a TO-39 (TO-205AD) metal can package mounted via through-hole technology, it offers robust thermal performance. The device exhibits a minimum DC current gain (hFE) of 40 at 100 mA and 1 V, and a saturation voltage (Vce Sat) of 600 mV at 100 mA and 1 A. The 2N4236L is suitable for use in industrial and high-reliability power switching and amplification circuits. It operates within a junction temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
Request a Quote
Clients Also Buy
JAN2N5339U3
TRANS NPN 100V 5A U-3
JAN2N3735
TRANS NPN 40V 1.5A TO39
2N5729
POWER BJT
