2N4232
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N4232 is a silicon NPN bipolar junction transistor (BJT) designed for general-purpose power applications. This through-hole component, supplied in bulk packaging, offers robust performance characteristics suitable for power switching and amplification tasks. Key parameters include a continuous collector current of 3A and a maximum collector-emitter voltage (Vce) of 60V. The 2N4232 features a DC current gain (hFE) range suitable for moderate current gain requirements in power supply regulation, audio amplification, and general switching circuits. Its construction allows for efficient heat dissipation in demanding environments. This component finds application across industrial automation, consumer electronics, and automotive systems where reliable power control is essential.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
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