2N4225
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N4225 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a 40V collector-emitter breakdown voltage and a maximum collector current of 3A, with a power dissipation capability of 5W. Encased in a TO-205AA (TO-5-3 Metal Can) package for through-hole mounting, the 2N4225 is suitable for power switching and amplification circuits. This component finds utility in industrial control systems, power supplies, and general-purpose amplification stages where robust performance and thermal management are critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 5 W |
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