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2N4112

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2N4112

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's 2N4112 is a PNP bipolar junction transistor (BJT) designed for power switching and amplification applications. This through-hole component, packaged in a TO-204AD (TO-3) metal can, offers a maximum collector current of 5 A and a power dissipation rating of 15 W. The device features a collector-emitter breakdown voltage of 60 V. Its operating temperature range is from -65°C to 200°C (junction temperature). The 2N4112 finds utility in various industrial and high-power electronic systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 500µA, 2mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-204AD (TO-3)
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max15 W

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