2N4071
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N4071 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This through-hole device features a collector-emitter breakdown voltage of 150V and a maximum collector current of 10A, with a power dissipation capability of 65W. Housed in a TO-204AD (TO-3) package, the 2N4071 is suitable for use in power switching and amplifier circuits within industrial and commercial sectors. The robust construction and electrical characteristics make it a reliable choice for demanding power management tasks.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 65 W |