2N4033UB
TRANS PNP 80V 1A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N4033UB is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a maximum power dissipation of 500mW, it is suitable for operation across an extended temperature range of -65°C to 200°C. Key electrical specifications include a minimum DC current gain (hFE) of 100 at 100mA and 5V, and a collector cutoff current (ICBO) of 10µA. The saturation voltage (Vce(sat)) is specified at 1V for a base current of 100mA driving a collector current of 1A. The 2N4033UB is provided in a 3-SMD, No Lead UB package for surface mounting and is available in bulk packaging. This transistor is commonly found in industrial control systems and power management circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |