2N4003
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N4003 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 100 V collector-emitter breakdown voltage and a substantial 30 A continuous collector current capability, supporting up to 100 W of power dissipation. The 2N4003 is housed in a robust TO-63 stud mount package (TO-211MB, TO-63-4), facilitating efficient thermal management in high-power configurations. Its operating temperature range of -65°C to 200°C makes it suitable for industrial, automotive, and power supply control systems where reliability under extreme conditions is paramount. This device is ideal for power switching and linear amplification circuits requiring robust current handling and voltage ratings.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 100 W |
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