2N4002
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N4002 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This stud-mount device, housed in a TO-63 package, offers a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 30A. With a power dissipation capability of 100W, the 2N4002 is suitable for demanding power switching and amplification tasks. Its robust construction and operating temperature range of -65°C to 200°C (TJ) make it a reliable choice for industrial control, power supplies, and automotive electronics. The 2N4002 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 100 W |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
2N5632
POWER BJT
MVR2N2222AUBC/TR
RH SMALL-SIGNAL BJT
