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2N4000

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2N4000

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's 2N4000 is an NPN bipolar junction transistor (BJT) designed for general-purpose power applications. This through-hole component features a TO-205AA (TO-5AA) metal can package, suitable for robust thermal management. It offers a maximum collector emitter breakdown voltage of 80 V and can handle a continuous collector current of up to 1 A, with a maximum power dissipation of 1 W. The transistor exhibits a Vce(sat) of 500mV at 100µA base current and 500µA collector current. Operating across a wide temperature range from -65°C to 200°C (TJ), the 2N4000 is commonly found in industrial control, power supply regulation, and audio amplification circuits.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 100µA, 500µA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Frequency - Transition-
Supplier Device PackageTO-5AA
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1 W

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