2N3997
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology 2N3997 is an NPN bipolar junction transistor (BJT) designed for robust power applications. This stud-mount device, housed in a TO-111 package, features a maximum collector emitter breakdown voltage of 80 V and a continuous collector current capability of 10 A. With a maximum power dissipation of 2 W, the 2N3997 exhibits a minimum DC current gain (hFE) of 80 at 1 A and 2 V. The transistor offers a saturation voltage (Vce(sat)) of up to 2 V at 5 A collector current and 500 mA base current. Key specifications include a collector cutoff current of 10 µA and an operating temperature range of -65°C to 200°C (TJ). This component is suitable for use in power switching and amplification circuits within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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