2N3996
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology NPN Bipolar Junction Transistor (BJT), part number 2N3996. This power transistor features an 80V collector-emitter breakdown voltage and can handle a continuous collector current of up to 10A. With a maximum power dissipation of 2W, it is suited for demanding applications. The device exhibits a minimum DC current gain (hFE) of 40 at 1A and 2V. Saturation voltage (Vce(sat)) is specified at a maximum of 2V for 5A collector current driven by 500mA base current. The TO-111 stud mount package facilitates robust thermal management. Applications for this component include power switching and amplification within industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 500mA, 5A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
Request a Quote
Clients Also Buy
2N5347
PNP TRANSISTORS
JANSP2N3439L
RH POWER BJT
JAN2N918
TRANS NPN 15V 0.05A TO72
