2N3879A
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3879A is an NPN bipolar junction transistor (BJT) designed for power applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a collector-emitter breakdown voltage of 75V and a maximum continuous collector current of 7A, with a power dissipation rating of 35W. Key electrical characteristics include a minimum DC current gain (hFE) of 20 at 4A and 5V, and a saturation voltage (Vce(sat)) of 1.2V at 400mA base current and 4A collector current. The device operates within an extended temperature range of -65°C to 200°C. This component finds application in industrial power control and general-purpose power switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 25mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 75 V |
| Power - Max | 35 W |
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