2N3879
NPN TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3879 is a high-performance NPN bipolar junction transistor. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a collector-emitter breakdown voltage of 75 V and a continuous collector current capability of 7 A. With a maximum power dissipation of 35 W, it is suitable for demanding applications. The transistor exhibits a minimum DC current gain (hFE) of 40 at 500 mA and 5 V. Saturation voltage (Vce) is specified at a maximum of 1.2 V at 400 mA collector current and 4 A base current. Operating temperature range extends from -65°C to 200°C. This device finds application in power switching and general-purpose amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 4mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 75 V |
| Power - Max | 35 W |
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