2N3849
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3849 is a high-power PNP bipolar junction transistor (BJT) housed in a TO-63 stud mount package. This component is designed for robust power handling, featuring a maximum collector current (Ic) of 20 A and a maximum power dissipation of 150 W. The collector-emitter breakdown voltage (Vce) is rated at 300 V. This device is suitable for applications requiring efficient power switching and amplification in demanding environments. Its construction and specifications make it a valuable component in industrial power control, motor drivers, and high-voltage power supply designs. The 2N3849 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 150 W |
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