2N3848
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3848 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This stud-mount component, housed in a TO-63 package, features a maximum collector current (Ic) of 20 A and a power dissipation capability of 150 W. The transistor offers a collector-emitter breakdown voltage (Vce) of 200 V, making it suitable for power switching and amplification circuits. Its robust construction and wide operating temperature range of -65°C to 200°C (TJ) ensure reliable performance in industrial, automotive, and power control systems. The 2N3848 is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-211MB, TO-63-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-63 |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 150 W |
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