Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

2N3791

Banner
productimage

2N3791

TRANS PNP 60V 10A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's 2N3791 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component offers a robust 60V collector-emitter breakdown voltage and a maximum collector current of 10A, with a power dissipation rating of 5W. Featuring a minimum DC current gain (hFE) of 30 at 3A and 2V, it ensures efficient amplification and switching. The 2N3791 is housed in a TO-3 (TO-204AA) through-hole package, suitable for robust thermal management. It operates across a wide temperature range of -65°C to 200°C. This transistor is commonly utilized in power switching, linear voltage regulation, and audio amplification circuits within industrial and automotive sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 2A, 10A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3A, 2V
Frequency - Transition-
Supplier Device PackageTO-3 (TO-204AA)
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max5 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy