2N3789
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3789 is a robust PNP bipolar junction transistor (BJT) designed for power applications. This component features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 10A, with a maximum power dissipation of 150W. The 2N3789 is housed in a TO-204AD (TO-3) package, facilitating through-hole mounting for straightforward integration into printed circuit boards. Its specifications make it suitable for use in industrial power control systems, audio amplification, and general-purpose switching applications where high current and power handling are essential.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-204AD (TO-3) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 150 W |
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