2N3777
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3777 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance. This through-hole component, packaged in a TO-205AA (TO-5-3 Metal Can), offers a collector-emitter breakdown voltage of 100 V and a maximum collector current of 1 A. With a power dissipation rating of 5 W, it is suitable for demanding applications. The device operates across a wide temperature range of -65°C to 200°C (TJ). Its specifications make it a reliable choice for power switching and amplification circuits within industrial, automotive, and general electronic equipment.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 5 W |
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