2N3775
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3775 is a PNP bipolar junction transistor (BJT) designed for power applications. This through-hole component features a TO-205AA (TO-5) metal can package and supports a maximum collector current (Ic) of 1A. With a collector-emitter breakdown voltage (Vce) of 60V and a power dissipation capability of 5W, the 2N3775 is suitable for amplification and switching circuits. It finds application in power supplies, audio amplifiers, and general-purpose switching within industrial and consumer electronics. The device is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 5 W |
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