2N3774
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3774 is a PNP bipolar junction transistor (BJT) designed for high-power applications. This device offers a collector-emitter breakdown voltage of 40V and a maximum collector current of 1A. With a power dissipation capability of 5W, it is suitable for use in demanding environments. The 2N3774 features a through-hole mounting type and is housed in a TO-205AA (TO-5-3 Metal Can) package, facilitating robust board-level integration. Its wide operating temperature range of -65°C to 200°C ensures reliable performance across various industrial and commercial applications. This component is commonly found in power switching and linear amplification circuits within the industrial, automotive, and defense sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-5AA |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 5 W |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
MVR2N2222AUBC/TR
RH SMALL-SIGNAL BJT
2N5632
POWER BJT
