2N3767
TRANS NPN 80V 4A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3767 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a robust 80V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) capability of up to 4A, dissipating a maximum of 25W. The transistor exhibits a minimum DC current gain (hFE) of 40 at 500mA collector current and 5V collector-emitter voltage. Its Vce saturation voltage is specified at a maximum of 2.5V when operating at 100mA base current and 1A collector current. Packaged in a TO-66 (TO-213AA) through-hole configuration, the 2N3767 is suitable for operation across a wide temperature range from -65°C to 200°C. This component finds utility in power switching and amplification circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 500mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |
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