2N3751
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3751 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This stud-mount device, housed in a TO-111 package, offers a maximum collector current of 5 A and a power dissipation of 30 W. Featuring a collector-emitter breakdown voltage of 60 V, the 2N3751 is suitable for power switching and amplification circuits in industrial and automotive sectors. Its robust design and substantial current and voltage ratings make it a reliable component for high-power circuitry where efficient thermal management is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 30 W |
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