2N3750
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3750 is an NPN bipolar junction transistor designed for high-power applications. This device features a collector current capability of 5 A and a maximum power dissipation of 30 W, housed in a robust TO-111 stud mount package. With a collector-emitter breakdown voltage (Vce) of 40 V, the 2N3750 is suitable for power switching and amplification circuits across various industrial sectors, including industrial control systems and power supplies. The stud mount configuration facilitates efficient thermal management for demanding operating conditions.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 30 W |
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