2N3747
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3747 is a high-power PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. Featuring a collector current capability of 5 A and a maximum power dissipation of 30 W, this device is well-suited for power switching and amplification circuits. The 2N3747 operates with a collector-emitter breakdown voltage of 40 V and is housed in a TO-111 stud mount package, facilitating efficient thermal management and secure mounting. Its capabilities make it a valuable component in industrial power control, audio amplification, and general-purpose power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 30 W |
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