2N3746
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3746 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications requiring robust current handling and voltage capability. This stud-mount device, housed in a TO-111 package, offers a maximum collector current of 5 A and a breakdown voltage of 80 V (Vceo). With a power dissipation rating of 30 W, it is suitable for power switching and amplification circuits in industrial, automotive, and power supply sectors. The TO-111-4, Stud package facilitates efficient thermal management, crucial for maintaining performance under significant load.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 30 W |
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