2N3744
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3744 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 40 V collector-emitter breakdown voltage and a maximum collector current of 5 A, with a power dissipation capability of 30 W. The 2N3744 utilizes a stud mount configuration, housed within a TO-111 package, facilitating robust thermal management and secure integration into various systems. Its robust construction and significant power handling make it suitable for use in industrial controls, power supplies, and audio amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-111-4, Stud |
| Mounting Type | Stud Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-111 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 30 W |
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