2N3741
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3741 is a high-performance PNP bipolar junction transistor (BJT) designed for demanding applications. It features a maximum collector current (Ic) of 4 A and a breakdown voltage (Vce) of 80 V, with a power dissipation capability of 25 W. This device offers a minimum DC current gain (hFE) of 40 at 100 mA and 1 V, and a saturation voltage (Vce Sat) of 600 mV at 125 mA and 1 A. The 2N3741 is housed in a TO-66 (TO-213AA) through-hole package, suitable for robust thermal management. Its operating temperature range spans from -65°C to 200°C (TJ). This component is commonly utilized in power switching and amplification circuits across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 25 W |
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