2N3740A
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N3740A is a high-performance PNP bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a robust TO-66 (TO-213AA) package, facilitating efficient thermal management for its 25 W power dissipation capability. With a maximum collector current of 10 A and a collector-emitter breakdown voltage of 60 V, the 2N3740A offers significant current handling and voltage blocking capabilities. Its transition frequency of 3 MHz and a minimum DC current gain (hFE) of 40 at 100 mA and 1 V make it suitable for amplification and switching circuits. The transistor exhibits a low saturation voltage of 600 mV at 125 mA collector current and 1 A base current, minimizing power loss during switching events. Operating over an extended temperature range of -65°C to 200°C (TJ), this device finds utility in various industrial and automotive power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 1V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 25 W |
Request a Quote
Clients Also Buy
2N3780
POWER BJT
2N2481
NPN TRANSISTOR
JANTX2N6353
TRANS NPN DARL 150V 5A TO66
