2N3740
PNP TRANSISTORManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N3740 is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a collector current capability of up to 4A and a maximum power dissipation of 25W. Key electrical specifications include a collector-emitter breakdown voltage of 60V and a minimum DC current gain (hFE) of 40 at 100mA and 1V. The transistor exhibits a collector cutoff current of 10µA (max) and a Vce saturation voltage of 600mV at 125mA collector current and the corresponding base current. Its operational temperature range spans from -65°C to 200°C. This device is well-suited for power switching and amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 25 W |
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