2N3739
TRANS NPN 300V 1A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's 2N3739 is a high-voltage NPN bipolar junction transistor (BJT) designed for robust performance in demanding applications. This TO-66 packaged device offers a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 1A, with a maximum power dissipation of 20W. Key electrical characteristics include a minimum DC current gain (hFE) of 25 at 250mA and 10V, and a collector-emitter saturation voltage (Vce(sat)) of 2.5V at 250mA collector current and 25mA base current. The 2N3739 features a low collector cutoff current (ICBO) of 100µA and operates across an extended temperature range of -55°C to 200°C. Its TO-213AA (TO-66) through-hole mounting style makes it suitable for power switching and amplification circuits commonly found in industrial control, power supplies, and high-voltage systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 25mA, 250mA |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 250mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 20 W |
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