2N3737UB/TR
TRANS NPN 40V 1.5A UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology 2N3737UB-TR is an NPN bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage (Vce) of 40V and a continuous collector current (Ic) capability of 1.5A. The device offers a minimum DC current gain (hFE) of 20 at 1A collector current and 1.5V Vce. With a maximum power dissipation of 500 mW and a high junction operating temperature range of -65°C to 200°C, it is suitable for demanding environments. The saturation voltage (Vce Sat) is specified at 900mV maximum for 100mA base current and 1A collector current. This transistor is provided in a 3-SMD, No Lead UB package, supplied on tape and reel (TR). It finds application in industrial control systems and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 1.5V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
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